Applied Technology

Breakthrough Scored on New Structured HBT Device

The Institute of Microelectronics, CAS recently scored a breakthrough on InP based HBT under the sub-project entitled New Structured HBT Device of “New Generation Compound Semiconductor Electronic Device and Circuit”. By making use of home-made InP-based HBT materials, the Microwave Device and Integrated Circuit Laboratory successfully came out for the first time the HBT with the gain cut-off frequency of 238 GHz, renewing the highest record of three terminal devices in China. The whole set of process layout and flow was designed by Researcher Jin Zhi, and the tape-out was carried out by Dr. Cheng Wei under his guidance. All processes were completed in the Institute of Microelectronics. During the process, the most advanced third generation micro air-bridge structure free technology and design were applied, achieving several technology breakthroughs.